Power transistor capable of multiple GHz range

The EPC8010 power transistor, sold in die form, measures 1.75 mm² with 100 VDS.  Optimized for high speed switching, the device has a maximum R_DS(on) of 160 mΩ and input gate charge in the hundreds of pico-coulombs.

The power transistor has switching transition speeds in the sub nano-second range, making it capable of hard-switching applications above 10 MHz. The product exhibits features high gain well into the low GHz range, making them suitable for envelope tracking, RF power amplifiers, and wireless power transfer systems for wireless charging of mobile devices.