Dual IGBT gate driver suits SiC MOSFETs

The IX2204 dual IGBT gate driver features two high-current outputs, each capable of sourcing 2 A and sinking 4 A. Manufactured on advanced BCDMOS silicon on insulator process, the device outputs have an operation voltage range from -10 to +26 V. The negative gate drive capability can be used to insure the turn-off of high power IGBTs. Applications include IGBT switching, motor controls and switch mode power supplies.

The IGBT gate driver IC provides the +18 to +20-V turn-on and the -2 to -5-V turn-off drive voltages required by many SiC power MOSFETs. Under voltage lockout (UVLO) circuitry protects the IGBT from insufficient gate voltage. The driver has TTL compatible inputs and is rated for an extended operating temperature range from -40° to +125°C. It is available in a 16-lead thermally enhanced SOIC package.