The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650 V for a current of 7 A (100°C), the C7 is optimized for hard switching topologies such as power factor correction, solar boost circuit applications.
The CoolMOS C7 offers an on-resistance between 19 mΩ and 225 mΩ), and a switching speed of 100 kHz. It differs from the C6 via a new multi-epitaxy technology and an original contact solution.
This reverse costing report provides an estimation of the production cost of the IPD65R225C7, a discrete CoolMOS transistor.
For more information please go to: http://www.researchandmarkets.com/publication/ma3azkh/infineon_coolmos_c7_reverse
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