50 V plastic GaN HEMTs target LTE, radar

The CGHV27060MP and the CGHV35060MP 50-V/60-W broadband GaN HEMTs support frequencies spanning UHF through 2.7 GHz (CGHV27060MP) and from 2.7GHz to 3.5GHz (CGHV35060MP). The GaN HEMT devices suit LTE micro base station amplifiers with 10 to 15-W average power and high efficiency topologies, such as Doherty or Class A, B, F amplifiers, and S-Band applications.

Using an S-Band radar circuit, the CGHV27060MP device provides 16.5 dB gain and 70% drain efficiency while the CGHV35060MP has 14.5-dB gain with 67% drain efficiency and 80-W output power at pulsed P_SAT with a 100-μs pulse width and 10% duty cycle. Both of the 50V GaN HEMTs are compatible with industry standard digital pre-distortion correction methods to increase amplifier efficiency, and their miniature (4.5 x 6.5 mm), plastic overmold packaging makes them an economical solution for higher volume applications.