The CMPA801B025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
The power amplifier, it’s rated for 25-W and 8.5 – 11.0 GHz operation, delivers high performance in a small form factor and features: 37 W typical POUT , 16 dB power gain, 35% typical power added efficiency (PAE), and www.wolfspeed.com
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