Wolfspeed will release the 900-W
Internally matched on input and output, the 900-W, 50-V GaN HEMT also exhibits 14-dB power gain and
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, this GaN-on-SiC RF device delivers a higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. In addition to L-Band radar power amplifiers, the GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.
For more information about the newly released CGHV14800, please visit ,53.cp?@2809457.lp?@083:&re=mc&ri=3104157&preview=false&distributionactionid=1929&action=follow-link”>EuMW 2016, visit Wolfspeed at Booth #156. For more information about Wolfspeed’s RF products and foundry services, please visit
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