Sixth-generation 650-V CoolSiC Schottky diode offers fast switching

By Alix Paultre, contributing editor

Infineon Technologies introduced the CoolSiC Schottky diode 650-V G6, built upon the distinctive characteristics of the G5, providing reliability, quality, and increased efficiency. The CoolSiC G6 diodes are a perfect complement to the 600-V and 650-V CoolMOS 7 families and are aiming at current and future applications in server and PC power, telecom equipment power, and PV inverter applications.

The CoolSiC Schottky diode 650-V G6 has a new layout, cell structure, and proprietary Schottky metal system, resulting in an industry benchmark V_F (1.25 V), and a Q_C x V_F figure of merit (FOM) 17% lower than the previous generation. In addition, the new G6 diode makes use of the SiC strong characteristics of temperature-independent switching behavior with no reverse recovery charge. The design of the device provides improved efficiency over all load conditions along with increased system power density, resulting in reduced cooling requirements, increased system reliability, and extremely fast switching.