eGaN power transistors target automotive systems

By Alex Pluemer, contributing writer

EPC recently expanded its portfolio of enhancement-mode gallium-nitride (eGaN) field-effect transistors (FETs) with the introduction of the EPC2206 and the EPC2212 discrete transistors supplied in wafer-level chip-scale (WLCS) packaging for use in a wide range of automotive applications. The new eGaN FETs are significantly smaller and deliver anywhere between 10- and 100-times-faster switching speeds than silicon power MOSFETs, said EPC.

eGaN technology has been available in volume production for over eight years in a variety of applications, including radar and LiDAR systems for autonomous vehicles, high-fidelity infotainment systems, high-intensity headlamps for trucks, and 48- to 12-V DC/DC converters used in data center computers, said EPC.

GaN devices can increase efficiency, reduce size and weight, and cut system costs in 48-V bus systems, said EPC. The EP2206 (80 V_DS ) is designed for vehicles that use 48-V bus power distribution to meet the growing power requirements of modern vehicles, such as electric steering, electronic suspension, and electric start-stop capabilities. In the case of autonomous automobiles, applications like ultrasonic sensors, onboard cameras, and LiDAR systems put an even greater strain on the vehicle’s power distribution, accelerating the move to 48-V bus systems, said the company.

The EP2212 (100 V_DS ) can be used in LiDAR systems on autonomous vehicles. To fire the LiDAR system’s lasers, the FET can be triggered to provide high current in “extremely” short pulse widths. The short pulse width delivers higher resolution, and the higher pulse current enables the system to differentiate objects at greater distances, providing the vehicle with more time to make critical safety maneuvers. The device can also be used for radar and ultrasonic sensors in automotive applications.

Product highlights:

EPC2206

• 80-V, 2.2-mΩ enhancement-mode FET
• 390-A pulsed current rating
• 6.1 × 2.3-mm chip-scale package

  EPC2212

• 100-V, 13.5-mΩ enhancement-mode FET
• 75-A pulsed current rating
• 2.1 × 1.6-mm chip-scale package

Both devices have completed AEC Q101 qualification testing. The EP2206 is priced at $3.65 each in quantities of 500. The EP2212 is priced at $1.37 each in quantities of 1,000. Both components are currently available from Digi-Key .