Microchip releases SiC power devices in production volumes

By Gina Roos, editor-in-chief

Continuing to build its portfolio of SiC power products, Microchip Technology Inc., via its Microsemi subsidiary, announced the production release of a family of SiC power devices . Offering the inherent advantages of wide-bandgap technology, including ruggedness and performance advantages, the new products include 700-V SiC MOSFETs and 700-V and 1,200-V SiC Schottky barrier diodes (SBDs). Wide-bandgap semiconductors are fast finding homes in a host of automotive, industrial, and military/aerospace applications.

Wide-bandgap semiconductor-based materials such as SiC and GaN “are intrinsically advantageous compared to silicon due to their higher bandgaps, lower conduction losses, and higher electron mobility,” said Elena Barbarini, Ph.D., head of Department Devices at System Plus Consulting, in a recent Yole Développement (Yole)  report. “This gives the possibility to reduce the size of their components and their passives [because] the switching frequency can be increased while having overall less losses, thus making the system more efficient.”

Microchip’s SiC power product portfolio, totaling more than 35 discrete products, consists of SiC die, discretes, and power modules across a range of voltages, current ratings, and package sizes. Microchip is one of the few companies that offers both silicon and SiC discrete and module products.

These products meet requirements in the electric vehicle (EV) market as well as other high-power applications. EV applications include external charging stations, onboard chargers, DC/DC converters, and powertrain/traction control solutions. The SiC market for EVs/HEVs (including on-board chargers) will reach about $400 million by 2022, according to Yole.

Microchip said that its SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels required for long-term reliability. The SiC SBDs perform approximately 20% better than other SiC diodes in unclamped inductive switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage, said Microchip.

The SiC MOSFETs exhibit excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of repetitive UIS (RUIS) testing.

Support and resources include development services, tools, and reference designs (including a SiC driver board and PFC Vienna reference designs). A range of SiC SPICE models are available. The new SiC devices are also backed by Microchip’s obsolescence practice, which ensures that devices will be produced for as long as customers need them.

A variety of die and package options are available for the SiC MOSFETs and SiC diodes. Products are available through Microchip’s authorized distribution network  and will be showcased at PCIM Europe 2019.