60-V MOSFET delivers greater power density

By Gina Roos, editor-in-chief

Vishay Intertechnology, Inc. has released a common-drain dual N-channel 60-V MOSFET in a compact, thermally enhanced PowerPAK 1212-8SCD package. The Vishay Siliconix SiSF20DN  is designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies.

The package construction — two monolithically integrated TrenchFET Gen IV N-channel MOSFETs in a common drain configuration — also makes the MOSFET well-suited for bidirectional switching in 24-V systems and industrial applications, including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance, and smoke alarms.

The SiSF20DN claims the industry’s lowest R_SS(ON)  in a 60-V common-drain device, down to 10 mΩ typical at 10 V, the lowest among 60-V devices in a 3 × 3-mm footprint, according to Vishay. This value represents a 42.5% improvement over the next best solution in this footprint size and is 89% lower than Vishay’s previous-generation devices, said Vishay. The result is reduced voltage drops across the power path and minimized power losses for increased efficiency.

In addition, for higher power density, the dual-MOSFET’s R_S1-S2(ON)  times area is 46.6% lower than the next best alternative MOSFET, even when including larger 6 × 5-mm solutions, said Vishay.

The SiSF20DN is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities are available now, with lead times of 30 weeks for larger orders. Pricing for U.S. delivery starts at $0.86 per piece in quantities of 10,000.