600-V MOSFETS target low-frequency applications

By Gina Roos, editor-in-chief

Infineon Technologies AG has developed the 600-V CoolMOS S7 product family for low-frequency applications. The family has been optimized for conduction performance, improved thermal resistance, and high-pulse current capability. Applications include active bridge rectification, inverter stages, PLCs, power solid-state relays, and solid-state circuit breakers.

The CoolMOS S7 devices deliver even lower on-resistance (R_DS(on) ) × A compared to CoolMOS 7 products to tradeoff switching losses for lower on-resistance and lower cost. Infineon said that the CoolMOS S7 products come with the lowest R_DS(on) in the market for a high-voltage switch, claiming the 10-mΩ CoolMOS S7 MOSFET as the industry’s smallest R_DS(on)  device.

Infineon packaged the 10-mΩ chip into a top-side cooled QDPAK and the 22-mΩ chip into a state-of-the-art small TO-leadless (TOLL) SMD package. With these devices, systems can meet regulations and energy-efficiency certification standards (i.e., titanium for SMPS) as well as meet power budgets and reduce part count, heat sinks, and total cost of ownership (TCO), said Infineon.

The 22-mΩ 600 V CoolMOS S7 device is available in TO-leadless and TO-220 packages, and the 40-mΩ and 65-mΩ devices are available in TO-leadless packages. The 10-mΩ CoolMOS S7 MOSFET will be in stock in Q4 2020.