By Gina Roos, editor-in-chief
Power Integrations’ SIC118xKQ SCALE-iDriver, a single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. The SIC1182KQ (1,200 V) and SIC1181KQ (750 V) SCALE-iDriver high-efficiency devices are optimized for driving SiC MOSFETs in automotive applications.
The new single-channel SIC118xKQ gate drivers provide up to 8 A and target SiC MOSFETs with standard gate-emitter voltages from 15 V, with various negative voltages in the range from –3 V to –15 V. The devices offer high external magnetic field immunity and are available in a compact eSOP package that provides ≥9.5 mm of creepage and clearance.
Other features include rail-to-rail output, fast gate-switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management, and reinforced isolation.
These devices also incorporate safety and protection features such as drain-to-source voltage (VDS) monitoring, SENSE readout, primary and secondary undervoltage lockout (UVLO), current-limited gate drive, and advanced active clamping (AAC) for safe operation and soft turn-off under fault conditions.
AAC in combination with VDS monitoring ensures safe turn-off in less than 2 µs during short-circuit conditions, said PI, while gate-drive control and AAC features allow gate resistance to be minimized, which reduces switching losses to maximize inverter efficiency. When combined with the company’s high-speed FluxLink communication technology, the gate drivers deliver technology compared to opto-, capacitive- or Si-isolated magnetic couplers.
This combination of the control and safety features with FluxLink significantly improves isolation capability and enables inverter designs with very few external components up to 300 kW, said PI.
Available now, the SCALE-iDriver gate drivers are priced at $5.39 in quantities of 10,000.
Advertisement
Learn more about Electronic Products Magazine
