By Gina Roos, editor-in-chief
Addressing the pain points in spectroscopic analysis, the need for a wider range of wavelengths, and sensitivity, together with smaller packaging, Kyoto Semiconductor Co., Ltd. has developed a two-wavelength photodiode that integrates silicon (Si) and indium-gallium-arsenide (InGaAs) photodiodes. The KP-2 two-tone photodiode, KPMC29, offers a smaller package that is one-eighth the volume of previous-generation devices, with photosensitivity over a wide wavelength range of 400 nm to 1,700 nm, arrayed on the same light axis.
Also surface-mountable, the small size of the KPMC29, together with broadband sensitivity, can be used in health-care applications that require smaller footprints, including medical biometric monitoring like pulse oximeters and wearable activity monitors.
In addition, because it is possible to independently produce photocurrent signals from the Si and InGaAs photodiodes, said the company, measuring the photocurrent ratio will allow the device to be used as a radiation thermometer that can measure temperatures without direct contact with a hot object.
Samples will be available starting on Aug. 31, 2020, followed by mass production in April 2021.
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