Infineon adds CoolSiC 62-mm MOSFET module

By Gina Roos, editor-in-chief

Infineon Technologies AG has added a 62-mm module, designed in a half-bridge topology, to its CoolSiC MOSFET 1,200-V module family. Based on the trench chip technology, the new device opens up silicon carbide for applications in the medium-power range starting at 250 kW — where silicon reaches the limits of power density with IGBT technology, said Infineon. New applications include solar, servers , energy storage, EV chargers,  traction, commercial induction cooking, and power conversion systems.

The 62-mm module features Infineon’s CoolSiC MOSFETs, which enable a high current density. Operating the device at high switching frequency will allow for the use of smaller magnetics, while operation at very low switching and conducting losses will minimize cooling components.

Optimized for high system availability, the housing features a robust mechanical design with a base plate and screw connections. It also provides high reliability thanks to a high thermal cycling capability and a continuous operating temperature (T vjop) of 150°C.

In addition, the symmetrical internal design of the housing allows for identical switching conditions for the upper and lower switch. As an option, the thermal performance of the module can be improved even further with a pre-applied thermal interface material (TIM).

The CoolSiC 1,200-V MOSFETs in the 62-mm package come in variants of 6 mΩ/250 A, 3 mΩ/357 A, and 2 mΩ/500 A. An evaluation board, designed for fast characterization, is available with flexible adjustment of the gate voltage and gate resistors. It can be used as a reference design for driver boards for series production.

Infineon is participating in the virtual PCIM 2020 conference, opening on July 1, 2020. The company will showcase its power semiconductors, including silicon, silicon carbide (CoolSiC), and gallium nitride (CoolGaN). Please click  here to register.