ON Semiconductor has claimed the industry’s first automotive-qualified silicon photomultiplier (SiPM) array for LiDAR applications. The RDM-Series SiPM array is based on the company’s RDM process, which enables high sensitivity to near-infrared (NIR) light, achieving 18.5% photon detection efficiency (PDE)1 at 905 nm.
The ArrayRDM-0112A20-QFN is a monolithic 1×12 array of SiPM pixels. The high internal gain of the SiPM allows sensitivity down to the single-photon level, said ON Semiconductor, a feature that in combination with the high PDE enables the detection of the faintest return signals. This extends the range to greater distances even with low reflective targets.
SiPM technology has become the sensor of choice for broad-market depth sensing applications due to its ability to deliver the highest signal-to-noise performance for long distance ranging in bright sunlight conditions, said ON Semiconductor. Other benefits include lower supply biases and lower sensitivity to temperature changes, which make it a suitable upgrade for systems that use legacy avalanche photodiodes (APDs).
In automotive applications, LiDAR can be used to improve safety and driver assistance systems (ADAS), including lane keeping and traffic jam assist. It is also used for fully autonomous driving use cases, such as robotic transportation, to safely navigate the environment in real time. Automotive applications are expected to be the key driver in LiDAR providing $1.8 billion in growth between 2019 and 2025, according to Yole Développement.
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To meet automotive LiDAR applications, the ArrayRDM-0112A20-QFN is AEC-Q102 qualified and developed in accordance with IATF 16949. An evaluation board (ArrayRDM−0112A20−GEVB) is also available.
1Max PDE at typical operating voltage and 21°C. PDE increases to >25% at 905 nm at elevated temperature.
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