UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has launched a registration-free online calculator that helps engineers select the right SiC device for their power designs. The FET-Jet Calculator allows for the selection and performance comparison in different power applications and topologies.
The company developed the calculator to help engineers working with SiC for the first time, or to help them select the best SiC device for their changing designs, which helps eliminate wasted effort around creating advanced simulations for the wrong devices, according to the company. It further helps power designers answer fundamental questions early in the design cycle, such as which topologies best meet their requirements, which power semiconductor should be used, and whether to parallel those devices.
Recommended
Designing with WBG semiconductors takes a little extra know-how
The calculator helps engineers identify the most optimal UnitedSiC device for their designs by application function, topology, and parameter details. It uses steady state circuit analysis and uses data from the datasheets. It covers a full range of the company’s FETs and diodes in a variety of power applications. These include AC/DC (boost PFC, total pole PFC, Vienna rectifier, and 2-level voltage source inverter), non-isolated DC/DC (buck or boost with or without synchronous rectification with 3-level boost, and isolated DC/DC (LLC in full or half-bridge variants, phase shift full bridge, and dual active bridge with phase control). It supports CCM and BCM conduction modes.
The tool automatically calculates switch current, efficiency, and losses, categorized by conduction, turn-on, and turn-off contributions, said the company. In addition, operating temperature and heat-sink rating are included as inputs, to show expected operating junction temperatures.
The calculator also allows users to compare the effect of changing conduction modes in the various topologies by varying storage inductor and switching frequency values. Single or paralleled devices can be selected to show relative overall performance of devices with various current ratings, said UnitedSic.
In addition, the tool will alert users if a selection is not appropriate. One example cited is when a voltage rating is insufficient for the conditions and topology chosen.
All UnitedSiC FETs and Schottky diodes can be selected from sortable tables, which include devices in TO-220, TO-247, TO-247/4L, DFN8x8 packages and the recently launched Gen 4 750 V devices.