Littelfuse, Inc. has expanded its silicon carbide (SiC) diodes portfolio with 1700 V-devices. The SiC Schottky diodes offer faster switching and higher efficiency for power electronics systems in data centers, building automation, and other high-power electronics applications.
The LSIC2SD170Bxx series SiC Schottky barrier diodes are available in the TO-247-2L package with current ratings of 10 A, 25 A, or 50 A. Key features include close-to-zero reverse recovery current, high surge capability, and a maximum operating junction temperature of 175°C.
SiC Schottky diodes can be used in a range of AC/DC and DC/DC power converters for industry, energy generation, and energy distribution/storage. These include industrial switch-mode power supplies, uninterruptable power supplies, battery chargers, solar inverters, industrial motor drives, and high-speed rectifiers.
The SiC diodes offer significantly reduced switching losses compared to silicon bipolar diodes, along with extremely fast, temperature-independent switching, said Littelfuse.
“Using SiC diodes in power designs instead of diodes based on legacy silicon-based technology helps designers develop more energy efficient power converters, saving energy and reducing costs related to cooling the power electronics,” said Francois Perraud, product marketing manager, SiC Products at Littelfuse, in a statement. “They enable the design of faster switching power electronics in the converters which can then be made more compact at the same output power or pack more power in the same volume.”
The LSIC2SD170Bxx SiC Schottky diodes are available in a tube with a minimum order quantity of 450. Samples are available through authorized distributors. Littelfuse also offers several 1200-V SiC Schottky diode series in the TO-220-2L package.
Advertisement
Learn more about Littelfuse
