STMicroelectronics unveils PowerGaN product family

STMicroelectronics has unveiled its first devices in the new PowerGaN product family as part of its STPOWER portfolio. Designed to enable more energy-efficient and slimmer power supplies, the new PowerGaN power semiconductor’s target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies for televisions and home appliances.

In higher-power applications, the PowerGaN devices also can be designed into telecom power supplies, industrial motor drives, solar inverters, and electric vehicles and chargers.

Gallium nitride (GaN) is a compound wide-bandgap semiconductor material that offers several benefits over silicon, including higher voltages without trade-offs in on-resistance, very low switching losses, and higher frequency operation,  said STMicroelectronics, which translate into higher efficiency as well as smaller sizes by reducing the size of passive components in the power application.

The first device released in ST’s new G-HEMT transistor family is the 650-V SGT120R65AL e-mode PowerGaN transistor with 120-mΩ maximum on-resistance (RDS(on)), 15-A maximum current capability, and a Kelvin source connection for optimum gate driving. Typical applications include PC adaptors, USB wall chargers, and wireless charging. The device is available now in an industry-standard PowerFLAT 5×6 HV compact surface-mount package, priced at $3.00 (1000 pieces).

The G-HEMT transistor family is an ultra-fast, zero Qrr e-mode HEMT that is easily parallelable and well suited for very high frequency and power applications, said the company. They provide extremely low conduction losses, high-current capability, and ultra-fast switching for high-power-density and high efficiency.

The 650-V GaN transistors in development are available now as engineering samples. These include the SGT120R65A2S with 120 mΩ RDS(on) in an advanced laminated package, the 2SPAK, which eliminates wire bonding to boost efficiency and reliability in high-power and high-frequency applications, said STMicro, as well as the SGT65R65AL and SGT65R65A2S both with 65 mΩ RDS(on) in PowerFLAT 5×6 HV and 2SPAK packages, respectively. Volume production is expected in the second half of 2022.

In addition, a new cascode GaN transistor, the SGT250R65ALCS with 250 mΩ RDS(on) in a PQFN 5×6 package, part of the G-FET family, will be available for sampling in Q3 2022. The G-FET transistor family is a very fast, ultra-low Qrr, robust GaN cascode or d-mode FET with a standard silicon gate-drive for a wide range of power applications, said STMicro.