GaN FET packs high power density in a small package

Efficient Power Conversion Corp. (EPC) has expanded its enhancement-mode gallium nitride (eGaN) FET family with the introduction of the 100-V, 2.2 mΩ EPC2071 GaN FET. The EPC2071 offers lower gate charges, Q_GD, and zero reverse recovery losses, which enable high-frequency operations of 1 MHz and above and high efficiency in a 10.2 mm² footprint for high power density.

Claimed as the smallest 100-V, 2 mΩ GaN FET, the EPC2071 is suited for space-constrained applications with demanding requirements for high-power-density performance. Applications include BLDC motor drives, including e-bikes, e-scooter, robots, drones, and power tools as well as telecom and server power supplies, and solar inverters.

The EPC2071 is footprint compatible with EPC’s prior Generation 4 family of products: the EPC2021, EPC2022, and EPC2206. However, the Generation 5 improvement in area × RDS(on) gives the EPC2071 the same on-resistance as the prior generation with a 26% smaller size.

Compared to a silicon MOSFET, the EPC2071 is one-third the size with the same RDS(on), and the dead time can be reduced from 500 ns to 20 ns to optimize the motor and inverter efficiency and to reduce acoustic noise, said EPC. In addition, the Q_G is one-fourth that of the silicon MOSFET.

EPC also offers the EPC9174 reference design board, a 1.2-kW, 48-V input to 12-V output LLC converter. It features the EPC2071 for the primary-side full bridge, along with the uP1966E and LMG1020 gate drivers as well as the Microchip dsPIC33CK32MP102 16-bit digital controller. The board, measuring 22.9 × 58.4 × 10 mm, delivers power density of 1472 W/in³) and peak efficiency of 97.3% at 550 W. Full load efficiency is 96.3% at 12 V, delivering a 100-A output.

The EPC2071 eGaN FET is priced at $3.81 each at 1K units/reel. The EPC9174 development board is priced at $498 each. Both the EPC2071 and EPC9174 demonstration board are available for immediate delivery from Digi-Key.

EPC offers a cross-reference tool for designers who are interested in replacing their silicon MOSFETs with a GaN solution. EPC is exhibiting at PCIM Europe, May 10-12, Hall 9, booth #113.