Diodes unveils its first SiC Schottky diodes

Diodes Inc. has introduced its first silicon carbide (SiC) Schottky barrier diodes (SBD). The new portfolio of SiC Schottky diodes includes the DSCxxA065 series with eleven products rated at 650 V (4 A, 6 A, 8 A and 10 A) and the DSCxx120 series with eight products rated at 1200 V (2 A, 5 A and 10 A).

(Source: Diodes Inc.)

These wide-bandgap SBDs deliver significantly improved efficiency and high-temperature reliability, while meeting requirements for reduced system running costs and low maintenance, said the company, offering performance benefits over conventional silicon-based products.

These benefits include negligible switching losses, low forward voltage (VF), reduced heat dissipations and high surge capability.

The negligible switching losses are thanks to a low capacitive charge (QC) that provides high efficiency in fast switching applications, making them suitable for circuit designs with higher power density and smaller overall solution size, said Diodes.

The high surge current capability offers increased robustness for higher system reliability, while the high thermal performance helps reduce build costs, added the company.

The SiC Schottky diodes are suitable for AC/DC, DC/DC and DC/AC switching converters, photovoltaic inverters, uninterruptable power supplies and industrial motor drive applications. Other applications include a variety of other circuits, such as boost converters for power factor correction.

The DSCxxA065 and DSCxx120 series are priced from $1.24 to $2.33 and $1.70 to $6.68, respectively, in quantities of 1,000. They are available in three package options: surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX) and ITO220AC (Type WX-NC).