SiC MOSFET enables higher power density

Diodes Inc. has expanded its portfolio of silicon-carbide (SiC) products with the launch of the DMWS120H100SM4 N-channel SiC MOSFET. The new SiC device targets higher efficiency and higher power density applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC/DC converters and electric vehicle (EV) battery chargers.

(Source: Diodes Inc.)

Suited for applications running in harsh environments, the DMWS120H100SM4 operates at a high voltage (1200 V) and drain current (up to 37 A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), said Diodes.

The SiC MOSFET provides a low RDS(ON) (typical) of only 80 mΩ (for a 15-V gate drive), which minimizes conduction losses and provides higher efficiency. It also has a gate charge of only 52 nC, which reduces switching losses and lowers the package temperature, the company added.

Diodes said the DMWS120H100SM4 is the first SiC MOSFET on the market in a TO247-4 package. “The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.”

The DMWS120H100SM4 is available now. It is priced at $21.50 in quantities of 20 pieces.

Earlier this year, Diodes introduced its first SiC Schottky barrier diodes (SBD). The new portfolio of SiC Schottky diodes includes the DSCxxA065 series with eleven products rated at 650 V (4 A, 6 A, 8 A and 10 A) and the DSCxx120 series with eight products rated at 1200 V (2 A, 5 A and 10 A).