600-V SJ MOSFETs enhance system efficiency

Magnachip Semiconductor Corp. has released a new nine-member family of 600-V Super Junction (SJ) MOSFETs that offer an R_DS(on) as low as 44-mΩ. Target applications include soft switching applications, server power supplies, telecom and electric-vehicle (EV) charging.

(Source: Magnachip Semiconductor)

The MOSFET family achieves a specific on-resistance reduction of approximately 10% yet maintains the same cell pitches of previous generation MOSFETs. The family is equipped with a fast recovery body diode, significantly enhancing system efficiency with reduced reverse recovery time (trr) and switching loss. As a result, the figure of merit to evaluate general performance improved by more than 10% over the previous generation, said Microchip.

One example is the MMQ60R044RFTH, which offers a low R_DS(on) of 44 mΩ, making it suited for EV chargers and servers. On resistance is the resistance between the drain and the source of MOSFETs during on-state operation.

This power MOSFET uses Magnachip’s advanced SJ technology to realize very low on-resistance and gate charge. It features an ultra-fast body diode, improving turn-off action and low power loss via high-speed switching. It also is 100% avalanche tested.

The MOSFET family is currently available in a variety of packages, including TO-247, TO-220FA, and DPAK. Magnachip expects to also introduce 650-V and 700-V SJ MOSFET products with fast recovery body diodes in the second half of 2023.

Family of 600-V SJ MOSFETs 

(Source: Magnachip Semiconductor)