PCIM preview: Demos, sneak peeks and new products

At PCIM Europe 2024, power electronics manufacturers will unveil their latest innovations and advances in power ICs and technologies. These include improvements in silicon power devices as well as advances in wide-bandgap (WBG) semiconductors like gallium nitride (GaN) and silicon carbide (SiC) discrete ICs and modules.

Although silicon MOSFETs and IGBTs are still favored by many power designers, GaN and SiC are making big inroads in new designs. According to a newly released Power Electronics Survey, conducted by Power Electronics News, 21% of survey respondents use IGBTs and 38% use silicon MOSFETs in their designs. However, the survey also finds that power designers have designed in SiC (20%) and GaN (16%) devices. For GaN, 5% of survey respondents use <400 V devices; 5% use >800 V and 6% use 650-800 V.

In emerging technologies, the survey reveals that power electronics designers are most excited about GaN (60% of respondents) and SiC (60% of respondents). For applications, EVs & charging infrastructure is number one, according to 37% of respondents, followed by renewable energy integration (35%) and smart grid and energy storage (35%). These findings align with some of the latest new power product launches.

The survey covers a range of topics, including design tools and software; component selection and design objectives; emerging technologies and applications; and training and professional development. The key areas of expertise for power electronics designers include power supply design, electrical machines/motors and test and measurement. Most are involved in design and development as well as research and development.

PCIM Europe 2024 will be held from June 11-13, in Nuremberg, Germany. The conference offers an extensive program that includes exhibits and presentations on four stages in hall 5, 6, 7 and 9, focusing on current topics in power electronics. These topics include inaugural discussions on evaluating the CO2 footprint for power electronic converters and the use of AI in power electronics.

The newly added Smart Power System Integration Stage, focused on power electronics manufacturing will focus on innovative solutions and application examples that meet challenges in power electronics production. A few examples include “Novel Interconnect and Packaging Technologies for Power Module Manufacturing,” presented by Boschman Technologies B.V., and “BMS as a Comprehensive System Solution,” led by STMicroelectronics.

The E-mobility & Energy Storage Stage showcases current and future developments in power electronics products for electromobility and energy storage.

The Technology Stage will host scientific presentations and panel discussions on research and development topics in the industry. Example topics include “Will SiC Ultimately Hold its Own against GaN?” and “GaN Wide Bandgap, The Future of Power.” Also watch for a session that covers updates for the Technical Working Groups of IEC, PECTA, IEEE and CIGRE.

At the Exhibitor Stage, over 600 exhibitors will showcase their latest products and solutions. They also will host short presentations and demonstrations.

PCIM Europe also has announced a new University Research Zone, where national and international universities and institutes will provide insight into the power electronics research landscape. Research projects will be presented by several universities, including the Technical University of Denmark, the Bundeswehr University Germany and RWTH Aachen University.

Demos, demos and more demos

A wide range of companies that participate in the power electronics supply chain, from GaN and SiC semiconductors and modules to PFC chokes and plastic optical fiber interconnects, also will hold live product demos at their exhibition stands.

For GaN semiconductors, Efficient Power Conversion Corp. (EPC) will showcase its latest generation of GaN FETS and ICs in a variety of real-world applications, focusing on efficiency, reliability and performance. The company will provide live demos of GaN-based devices in applications such as robotics, drones, solar optimizers and AI servers.

EPC also will highlight its Interactive Wall of GaN to help designers select the right GaN FET or IC for their applications and will host several technical sessions on the latest trends and advancements in GaN power conversion technology. Topics include GaN-on-Si devices, parallel connection of GaN FETs and PCB-only thermal management techniques for eGaN FETs in a half-bridge configuration. Alex Lidow, EPC’s CEO, also will lead two panel discussions on SiC and GaN power. Visit EPC in hall 9, booth #318.

Infineon Technologies AG will showcase how its latest semiconductor, software and tooling solutions meet green and digital transformation challenges. Infineon also will share insights into its recently announced Product Carbon Footprint (PCF) program, which will provide customers with comprehensive data to quantify greenhouse gas emissions at an individual product level. The company will provide PCF data for its entire product portfolio, starting now with half of its portfolio. Infineon reports that the company’s chips in their lifetime will save 34 times the amount of CO2e emitted during their production.

Under the motto, “Driving decarbonization and digitalization. Together.”, Infineon will demonstrate its power electronics portfolio covering all silicon, SiC and GaN power technologies. The products, demos and design tools will focus on how Infineon’s product-to-system expertise in power management enables engineers to balance operational specifications with application requirements.

Demonstrations will include solutions in WBG technologies, including 650-V and 1,200-V Gen 2 CoolSiC MOSFETs; renewables, energy storage and HVDC (hybrid solar inverters and In-Field Power Analytics Service); industrial automation, motor drives and control (motor control, advanced sensors, connectivity components and solid-state relays); information and communication technologies (power supply modules, POL solutions, converters and power switches); e-mobility, eTransportation and charging solutions (traction inverters with fusion, single-side cooling and discrete concepts, traction inverter systems for commercial vehicles and rail transport, as well as high power fast charging solutions); and smart and connected homes (USB-C charging solutions, residential heat pumps and air conditioning systems.

This year, Infineon will exhibit in two booths. Visit hall 7, booth #740 for silicon (Si)and SiC-based demos and booth #169 for GaN products.

Innoscience Technology will highlight its full range of GaN-based solutions. The company also plans to show via a tech talk (hall 7, booth #743 on the Tech Stage) that GaN devices are price-comparative with silicon, and reliable and available as discrete (InnoGaN), integrated (SolidGaN) and bidirectional (V-GaN) devices.

In hall 7, booth #121, Innoscience will showcase its portfolio covering 30-V to 700-V-rated GaN power devices, including discrete (InnoGaN), integrated with driver and protection (SolidGaN), and bidirectional (V-GaN) devices as well as GaN gate drivers. Several demos will highlight the advances made possible with GaN technology, focusing on faster, smaller, lighter, greener/more efficient and cheaper.

Demos will include a 200-W LED GaN driver that is 50% smaller and thinner than its silicon counterpart; 140-200 W GaN-based AC/DC power converter that features InnoGaN at the primary and secondary side; a 4.2-kW power supply unit (PSU) that is 50% smaller and more efficient (80+ Titanium) than the silicon counterpart and a 1-kW 48-12 V DC/DC converter with high power density (70% smaller than in silicon).

Other demos include a 1-kW inverter for BLDC motors, a 2-kW solar PV microinverter, a 300-W ultra-high-density TV PSU, a 2.4-kW bidirectional DC/DC converter and InnoGaN for e-bikes with a compact 240-W charger and 3-phase motor driver.

ITG Electronics will exhibit its expanded series of power factor correction (PFC) chokes as well as highlight its collaboration with STMicroelectronics on magnetic compound solutions used in AI and data-center power conversion sectors. The PFC282820B and PFC282822B series of PFC chokes, suitable for 500-1,000 W continuous conduction mode PFC boost converter applications, will be showcased at hall 5, booth #355. The new offerings are part of the company’s Cubic Design PFC Choke series. Compared with traditional, toroidal-shaped PFC chokes, the new series extension incorporates a flat wire and square core to save space and increase power density, aligning with higher power density requirements, the company said.

The ITG and STMicroelectronics collaboration will showcases magnetic component solutions for 54 V/48-V to 12-V converter applications. ST’s stacked buck converter features an on-board solution with a ¼-brick space using the PM6780 dual digital multiphase controller, the STPRDC02A high-voltage full-bridge driver and ITG’s L101353A-3R6MHF non-coupling dual inductors. This latest magnetics design collaboration is called a stacked buck converter with unified coupled inductor.

Combined with ST’s PM6780 and STPRDC02A, ITG’s L101456A-1R4MHF can boost the overall power rating of ST’s 48-V solution to 1,500 watts, claiming the industry’s highest power density rating for 48V solutions. The on-board stacked buck converter 48-V conversion system offers cost savings, form factor flexibility and a customizable design compared to power-module designs, ITG said.

Separately, STMicroelectronics will lead several sessions on research initiatives for advancing power technologies. Topics include high-power-density designs; high power DC/DC, AC/DC and DC/AC converters; SiC and GaN devices, low voltage switches; integration technologies and reliability design and e-mobility. Visit ST at hall 7, stand #410.

Microchip Technology Inc. will feature 17 demos in hall 7, booth #640. Three examples include a level 2, public AC, bidirectional EV charger for three-phase applications; a 30-kW integrated PFC/DC/DC PSU demo featuring its mSiC technology for plug-in hybrid electric vehicle/battery electric vehicle (PHEV/BEV) charger and high-power switch-mode power supply (SMPS) applications; and a XIFM intelligent isolated plug-and-play mSiC gate driver that drives 3.3-kV SiC modules in high-voltage packages.

Navitas Semiconductor is hosting a “Planet Navitas” experience in Hall 9, booth #544, aligned with its mission to “Electrify Our World.” The company will showcase how GaN and SiC solutions can deliver optimal performance in a broad range of fast-growing markets and applications from 20 W to 20 MW.

Each solution example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO₂ by 2050. Solution applications include fully-electrified EV transportation, AI data centers, industrial compressors, drives, robotics and renewable energy sourcing and storage.

The company also will announce technology updates and new product releases. These include GaNSafe power, Gen-4 GaNSense half-bridge ICs and Gen-3 Fast GeneSiC power FETs. The company will host several technical presentations, “Low-Cost High-Density 300 W/20 V AC/DC Converter Enabled by GaN Power ICs” and “Evaluation of SiC Devices for Over 500 kHz Application Based on Buck Circuit.”

NovoSense Microelectronics will showcase its latest developments for automotive design and industrial control, including sensor, signal chain and power management ICs, in hall 9, booth #636. Company experts will be available for in-depth discussions and live demonstrations.

A key product featured at the show is the new NSUC1610 motor driver system-on-chip (SoC) solution. The NSUC1610 integrates a Cortex M3 processor, MOSFET and DAC into a single chip, simplifying peripheral circuits and reducing system costs. It comes with a four-wire LIN bus support and a dual-channel temperature sensor, targeting automotive systems.

NovoSense also will demonstrate the NSM201x range of integrated current sensors. Designed for precision and reliability, these sensors feature current measurement accuracy of up to ±2% and high isolation voltage of up to 5,000 Vrms. Target applications include photovoltaic cluster inverters, power supplies and automotive on-board chargers (OBCs).

Other products on display include the NSI6611 smart isolated gate driver, a single-channel smart driver for switching power supply and inverters applications and the NCA1462-Q1 automotive-grade CAN transceiver with signal improvement capability.

ROHM Semiconductor will announce new power semiconductor solutions, with a focus on WBG devices, in hall 9, booth #304. Aligned with “Empowering Growth, Inspiring Innovation,” Rohm will demonstrate how it solves social and ecological challenges with its technologies. The company also will participate in several panel discussions and presentations.

Rohm will unveil its new SiC power modules for automotive applications and exhibit the EcoGaN family of 150-V and 650-V GaN HEMTs with several evaluation kits.  It also will display more than ten boards from its EcoGaN family, showcasing industrial solutions.

Sneak peeks

Several power manufacturers plan to launch new products at the show, highlighting the demand for SiC power solutions. A few sneak peeks include SemiQ’s 1,200-V half-bridge modules and WeEn Semiconductors’ range of SiC MOSFETs, power modules and Schottky barrier diodes (SBDs).

SemiQ plans to unveil high-performance 1,200-V half-bridge modules in the S3 package and showcase its latest SiC power solutions and recently launched known-good-die (KGD) screening process at PCIM Europe 2024. Visit the company in hall 7, booth #418.

Debuting the latest addition to its QSiC family of high-speed-switching MOSFET half-bridge modules in S3 packages, the new devices offer enhanced design flexibility and performance and address the size, weight and power demands of challenging applications, ranging from induction heaters, welding equipment and uninterruptible power supplies (UPS) to photovoltaic and wind inverters, energy storage systems, high-voltage DC/DC converters and battery charging systems for electric vehicles (EVs). They are available in 600 A (GCMX003A120S3B1-N) and 400 A (GCMX005A120S3B1-N) variants.

Also on display are the QSiC family of 1,200-V modules in SOT-227, half-bridge and full-bridge options.

WeEn Semiconductors will showcase its latest highly efficient, high-power-density SiC technologies, automotive-grade power devices and IGBTs, highlighting this year’s theme of “Power Efficiency for a Cooler Planet.” In hall 9, booth #538, the company will exhibit a range of high-voltage 1,700-V SiC power modules, SiC 1,200-V/750-V MOSFETs, thyristors, power diodes, silicon-controlled rectifiers (SCRs), IGBTs, and other advanced power devices tailored for the renewable energy and e-mobility industries.

In addition, the company will launch a range of SiC MOSFETs and SiC SBDs in TSPAK packages for EV charging, OBCs, PV inverters and high-power-density PSU applications. The new MOSFETs are available in 650-V, 750-V, 1,200-V, and 1,700-V variants, with resistance ranging from 20 mΩ to 150 mΩ. The current range for the new SiC SBDs is 10-40 A in 650-V, 750-V and 1200-V variants.

Mitsubishi Electric Corporation announced that it will launch a web-based service on June 28 to provide data on the design and validation of a proprietary prototype inverter using a module containing three LV100 IGBTs. The service is aimed at helping customers accelerate their development of high-power inverters for applications such as photovoltaic power-generation systems.  The reference information provided by the service is expected to reduce their inverter system development workloads. Mitsubishi will exhibit the service at PCIM Europe.

The prototype inverter includes a package of three parallel LV100 industrial IGBTs in a module measuring 100 × 140mm module, typical in high-power inverter systems, the company said. The reference data will include design data, such as geometry, component layout and electrical circuitry, as well as evaluation data such as temperatures, short-circuit protection, current balance and computer-aided engineering (CAE) validation results.

New products

Ahead of PCIM Europe, several power IC companies have announced new product launches that will be featured at the conference. These include new power products from Alpha and Omega, Infineon, Microchip, Navitas and Skyworks.

Alpha and Omega Semiconductor Limited has announced the expansion of its surface-mount and module package portfolio options for the second generation 650-V to 1,200-V αSiC MOSFETs. These devices can be used in a range of applications, including xEV charging, solar inverters and industrial power supplies. The new packages give designers the added flexibility of multiple system optimization options to further maximize system efficiency while streamlining their manufacturing process, AOS said. The company will showcase the expanded package options in hall 9, booth #519.

Infineon has unveiled its 400-V CoolSiC MOSFETs, which the company said will redefine power density and efficiency in AI server power supplies. The new CoolSiC MOSFET 400-V family, based on the  second generation (G2) CoolSiC technology introduced earlier this year, was specially developed for use in the AC/DC stage of AI servers,  complementing Infineon’s recently announced PSU roadmap . The devices are also suited for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.

The new family features ultra-low conduction and switching losses when compared to existing 650-V SiC and Si MOSFETs. Implemented in a multi-level PFC, the AC/DC stage of the AI server PSU can achieve a power density of more than 100 W/in³ and reach 99.5 percent efficiency, which is an efficiency improvement of 0.3 percentage points over solutions using 650-V SiC MOSFETs, Infineon said. The system solution is completed by implementing CoolGaN transistors in the DC/DC stage. The power supply can deliver more than 8 kW with an increase in power density by a factor of more than three compared to current solutions, the company said.

Infineon also recently introduced the 600-V CoolMOS 8 high-voltage superjunction (SJ) MOSFET product family. The devices combine the best features of the 600-V CoolMOS 7 MOSFET series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families. The new SJ MOSFETs include an integrated fast body diode, making them suitable for a wide range of applications such as server and industrial SMPS, EV chargers and micro-solar.

In the GaN portfolio, Infineon announced two new CoolGaN product technologies: the CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense. CoolGaN BDS is reported to offer exceptional soft- and hard-switching behavior, with bidirectional switches available at 40 V, 650 V and 850 V. Target applications include mobile device USB ports, battery management systems, inverters and rectifiers. The CoolGaN Smart Sense products feature lossless current sensing, simplifying design and further reducing power losses, as well as transistor switch functions integrated into one package. They are suited for consumer USB-C chargers and adapters.

Microchip Technology has introduced an OBC solution that uses a selection of its automotive-qualified digital, analog, connectivity and power devices, including the dsPIC33C digital signal controller (DSC), the MCP14C1 isolated SiC gate driver and mSiC MOSFETs in an industry-standard D2PAK-7L XL package. Leveraging the benefits of each of these components, the solution is designed to increase the OBC system’s efficiency and reliability. This is thanks to the dsPIC33 DSC’s advanced control functions, the MCP14C1 gate driver’s high-voltage reinforced isolation with robust noise immunity and the mSiC MOSFETs’ reduced switching losses and improved thermal management capabilities, according to the company.

Mitsubishi Electric announced that it has started shipping two SBD-embedded SiC MOSFET modules for high-efficiency inverter systems in applications such as railcars and electric power systems. The new low-current 3.3 kV/400 A and 3.3 kV/200 A versions for large industrial equipment, including rolling stock and electric power systems, join the existing 3.3 kV/800 A product.

The newly named Unifull series is comprised of three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment, the company said. These devices feature an optimized package structure to reduce switching loss and improve SiC performance.

The Unifull modules significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, compared to existing power modules, Mitsubishi said, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.

Navitas Semiconductor has released its Gen-3 ‘Fast’ (G3F) 650-V and 1,200-V silicon-carbide (SiC) MOSFETs. These devices are optimized for fast switching, high efficiency and increased power density for applications such as AI data-center power supplies, OBCs, fast EV roadside super-chargers and solar/energy-storage systems (ESS).

Optimized for high-speed switching, the G3F family offers a 40% improvement to hard-switching figures-of-merits (FOMs) compared to the competition in CCM TPPFC systems, according to Navitas. This will enable an increase in the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack from 30 kW to 100-120 kW.

Skyworks Solutions, Inc. has introduced its Si82Ex/Fx value and performance isolated gate drivers as an upgrade path for its Si823x and Si823Hx ISO drivers. The Si82Ex value driver offers backward compatibility and a traditional voltage-controlled design, using Skyworks’ advanced, proprietary silicon isolation technology with support for 6 kVRMS for one minute isolation voltage. The Si82Fx with advanced isolation technology offers a new approach to driving power devices through its paradigm-shifting drive strength control feature called Selectable Variable Current Drive, or SelVCD, the company said. Skyworks is exhibiting in hall 6, booth #200.

Watch for further updates on these new product announcements.

Power supply chain components

There is also a range of components that are needed to support power electronics applications. Several of these suppliers also are exhibiting at the show. A few examples include Firecomms, MacDermid Alpha Electronics Solutions, Rohde & Schwarz and Sabic.

Firecomms will showcase its line of plastic optical fiber interconnects with high EMI immunity for power electronics applications. These plastic optical fiber transceivers and industrial-grade interconnects provide high voltage isolation and EMI immunity for high-voltage DC drives, robotics, renewable energy, medical diagnostic equipment, diesel and electric traction, industrial power control systems and other power electronics applications.

Products on display include RedLink industrial-grade plastic optical fiber transceivers, SMI transceivers compliant to the IEEE1394b POF communication standard, OptoLock analog & industrial fiber optic transceivers, media converters with POF transceivers for high-bandwidth networks with Ethernet data and cables & plugs. Visit the company in hall 7, booth #440. The Firecomms exhibit is co-located with European distributor MEV Elektronik Service GMBH.

MacDermid Alpha Electronics Solutions will showcase advanced solutions for die, package and top-side attach in hall 7, booth #460. This includes the Argomax AccuLam, called a breakthrough product for silver sintering that delivers both higher throughput and larger area lamination compatibility, and it can be tailored to specific production requirements.

Research shows that a combination of harsh operating conditions, increased power densities, and miniaturization adds to the complexity of assembly designs in automotive electronics. The company will present papers on improving the consistency of sintered joints and enabling higher component operating temperatures.

Rohde & Schwarz will exhibit is its latest solutions for power electronics testing, targeting WBG device test and debug. The company’s experts will share their knowledge of applications such as inverter drive design, double pulse testing and EMI debugging, using the company’s test instruments.

Under the motto “Moving to next-generation wide bandgap device testing & debugging,” Rohde & Schwarz will feature its next-generation test instruments in hall 7, booth #619, including its MXO 5 and MXO 5C series oscilloscopes. The company’s first eight-channel oscilloscopes are based on the company’s own MXO-EP processing ASIC technology, a technological breakthrough that makes it possible to achieve the industry’s first real-time acquisition rate of 4.5 million waveforms per second, as seen in the MXO 4 series, the company said.

The MXO 5C is the compact version of the MXO 5, but without an integrated display, making it suited for rack-mount applications. Both support simultaneous real-time acquisition on four channels, processing a total of 18 million waveforms per second. The company said that visitors can learn how these instruments can help solve complex design challenges and get a first glimpse into a ground-breaking solution for measuring with high common-mode voltages at high frequencies, the company said.

Sabic is showcasing the first commercial application of its high-heat ELCRES HTV150A dielectric film in Nichicon Corp’s high-temperature and high-voltage capacitors for AC/DC traction inverter modules in EVs. Sabic said this ultra-thin specialty film addresses industry demand for advanced film capacitors that can enable more-efficient AC/DC power modules. A prototype capacitor will be featured at the Sabic stand in hall 7, booth #140.

Capacitors made with ELCRES HTV150A dielectric films can operate at high temperatures (up to 150°C) and high voltages (up to 1,000 volts) with stable performance, compared to traditional film solutions, Sabic said. The development project for Nichicon’s film capacitors involved the segmented metallization of the ELCRES HTV150A film to help achieve 900-1,000 V. The film’s stable, inherent dielectric properties enable the capacitors to operate at 150°C. This work included 2,000 hours of reliability life testing at 150°C and 3,600 hours at 130°C. Three presentations at the show will cover the film and capacitor project.