1,200-V IGBT targets solar inverters

Magnachip Semiconductor has developed a 1,200-V, 75-A insulated gate bipolar transistor (IGBT) in a TO-247PLUS package for applications that depend on strict power ratings and high efficiency. Meeting JEDEC standards, the new IGBT can be used in a range of applications including solar inverters, converters, uninterruptible power supply systems and general-purpose inverters.

IGBT and MXT MV MOSFET product lines for solar inverters (Source: Magnachip Semiconductor)

The new MBQA75T120RFS joins Magnachip’s previously introduced IGBT family for solar inverters, including the  1,200-V, 40-A IGBT (MBQ40T120QFS) and the 650-V, 75-A IGBT (MBQ75T65PEH).

The TO-247PLUS packaging delivers a wide heat spreader, enhances power efficiency and improves heat dissipation when compared to a TO-247 package. It reduces conduction loss by over 14% compared to a previous generation, ensuring stable operation and greater system reliability in overload conditions, Magnachip said.

Magnachip’s solar energy IGBT product family

(Source: Magnachip Semiconductor)

“With this new product launch, Magnachip’s solar energy power product lineup has been further strengthened and now boasts high-performance IGBTs and MXT MV MOSFETs that satisfy the technical requirements of applications in the solar energy market,” said YJ Kim, CEO of Magnachip, in a statement.

Magnachip’s solar energy MXT MV MOSFET product family

(Source: Magnachip Semiconductor)

The new MBQA75T120RFS can replace two 40-A IGBTs, improving design flexibility. It also incorporates a fast recovery anti-parallel diode removing residual current, reducing switching losses and guaranteeing a maximum operating junction temperature of 175°C.

Mass production of the MBQA75T120RFS will begin in October 2024.