The AlphaDFN family AOC3862 from Alpha and Omega Semiconductor (AOS) features a common-drain 12-V dual n-channel MOSFET with source-to-source on-resistance (Rsson), typical 2.38 mW at 4.5-V gate drive. This Rsson gives the battery protection circuit designer the lowest voltage drop and temperature rise in the protection circuit module. Additional backside protection provides added reliability and safety when mounting the small devices onto the PCB. The MOSFET targets the protection circuit in high-capacity battery packs, which are used in almost all new smartphones.
In the design of smartphone battery packs, two technical factors have completely changed the protection circuit design over the last two years. First, a higher charging current is applied to charge the battery in a shorter time. Second, designers are using as much space as possible to fit in more active battery cells. These factors present additional challenges to protection board designers to control the temperature rise to a minimum level within tighter board space. The low Rss, typically 2.38 mW at 4.5-V gate drive and 2.5 mW at 3.8-V gate drive, is realized by the reduction of both channel resistance and distribution resistance. The part is offered in a 3.55 x 1.77-mm AlphaDFN package.
The AOC3862 is immediately available in production quantities with a lead-time of 12–14 weeks. The unit price for 1,000 pieces is $0.55. For more information, please visit www.aosmd.com.
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