Breakthrough MOSFETs set
low-threshold benchmark
Quad/dual n-channel matched-pair arrays require only +0.20 V, enabling nanowatt-power circuits
Providing designers a new level of accuracy in controlling gate threshold and sub-threshold voltage characteristics in circuits, a family of quad/dual n-channel matched-pair enhancement-mode MOSFET arrays have a threshold voltage as low as +0.20 V with a tolerance of ±0.02 V. Along with very tight tolerances, the devices' extremely low threshold voltage enables the creation of circuits that operate on mere nanowatts of power.
Available as quad and dual devices in PDIP and SOIC packages, the ALD110802/ALD110902 have a gate threshold voltage of +0.20 V at 1 µA (±0.02 V); the ALD110808/ALD110908 have a threshold of +0.80 V at 1 µA (±0.02 V); and the ALD110814/ALD110914 have a threshold of +1.40 V (±0.04 V). In addition, the ALD110808 devices are also available in versions (named ALD110808A/ALD110908A) with a gate threshold voltage of +0.80 V ±0.01 V at 1 µA. (From $0.67 ea/100�available now.)
Advanced Linear Devices
Sunnyvale, CA
Information 408-747-1155
Fax 408-747-1286
http://www.aldinc.com
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