CoolSiC MOSFETs offer breakdown voltage of 2,000 V

Infineon Technologies AG has unveiled a new family of CoolSiC MOSFETs with a breakdown voltage of 2,000 V to address growing demand for increased power density, while maintaining system reliability even under high voltage and switching frequency conditions. Given its low switching losses and silicon-carbide (SiC) performance, these devices are suited for applications such as photovoltaic inverters, energy storage systems and electric-vehicle charging.

(Source: Infineon Technologies AG)

A key feature of the CoolSiC MOSFETs is its higher DC link voltage that enables power to be increased without increasing  current. They are suited for high DC link systems with up to 1,500 VDC. Infineon said the new CoolSiC MOSFET family offers the first discrete SiC devices available with a breakdown voltage of 2,000 V. The devices deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation.

The CoolSiC MOSFET 2,000-V product family is currently available. The device comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. An evaluation board (EVAL-COOLSIC-2KVHCC) also is available as a universal test platform to evaluate all CoolSiC MOSFETs and 2,000-V diodes as well as the EiceDRIVER compact single-channel isolated gate driver 1ED31xx product family via double pulse or continuous PWM operation.

Infineon also announced it will soon launch matching CoolSiC diodes. The first launch will be the 2,000-V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2,000-V CoolSiC diode portfolio in the TO-247-2 package in the fourth quarter of 2024. The diodes are  suitable for solar applications. A matching gate driver portfolio is also available.