Infineon Technologies AG has unveiled the 750-V G1 discrete CoolSiC MOSFET family, addressing the need for higher efficiency and power density in industrial and automotive power applications. This family includes industrial-grade and automotive-grade SiC MOSFETs that are optimized for totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost and phase-shifted full-bridge (PSFB) topologies. Their design delivers lower conduction and switching losses, which increases overall system efficiency.
These CoolSiC MOSFETs can be used in industrial applications, including industrial drives, solar and energy storage systems, solid-state circuit breakers, UPS systems, servers/data centers and telecommunications. For automotive, they are suited for applications such as electric vehicle (EV) charging, onboard chargers (OBCs) and DC/DC converters.
Infineon said the CoolSiC MOSFET 750-V G1 technology features excellent RDS(on) × Qfr and superior RDS(on) × Qoss figure-of-merits (FOMs), delivering ultra-high efficiency in hard-switching and soft-switching topologies. The combination of high threshold voltage (VGS(th), Typ. of 4.3 V) with low QGD/QGS ratio ensures protection against parasitic turn-on and enables unipolar gate driving, with the benefits of increased power density and lower system costs.
The devices in the portfolio range from 8 to 140-mΩ RDS(on) at 25°C, meeting a wide range of applications. Their packages minimize thermal resistance for improved heat dissipation and optimize in-circuit power loop inductance, also contributing to higher power density and lower system costs.
The CoolSiC MOSFET 750-V G1 MOSFETs for automotive applications are available in QDPAK top-side cooled (TSC), D2PAK-7L and TO-247-4 packages. Industrial-grade MOSFETs are available in QDPAK TSC and TO-247-4 packages. Infineon is showcasing its CoolSiC and CoolGaN products at APEC 2024, booth #1013 and #1319. Upcoming webinars will address automotive charging using silicon, SiC and GaN technologies.
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