Cree SiC MOSFETs help power Japan’s solar energy infrastructure

Cree announced that its C2M, 1200 V, 80 mΩ SiC MOSFETs have been selected by Sanix Corporation, Japan, to be designed into their new 9.9 kW three-phase solar inverters for use in the construction of commercial photovoltaic systems in the fast-growing Japanese solar energy market.

“Through this partnership with Cree and their SiC technology, Sanix is able to capture more market share in the competitive Japan solar market,” said Hiroshi Soga, general manager, Sanix Incorporated. “Cree’s silicon carbide MOSFETs were critical for Sanix to meet our efficiency and thermal design targets. SiC switches reduced losses in our inverter electronics by more than 30 percent versus the silicon super-junction MOSFETs we were considering. In addition to providing a large efficiency gain, Cree’s latest generation C2M SiC MOSFETs were priced competitively, making it possible to replace lower voltage, less rugged, and less efficient silicon MOSFETs.”

Utilized in the primary power conversion stage of the solar inverter, Cree’s 1200 V C2M0080120D MOSFETs feature faster switching characteristics and up to one-third the switching losses of comparably-rated 900-V silicon super-junction MOSFETs. By significantly reducing switching losses, Cree’s SiC MOSFETs enable lower total system energy losses, higher frequency switching, and cooler operating temperatures. These benefits improve conversion efficiency and reduce the system’s size, weight, complexity, and thermal management requirements. At the system level, performance is improved, cost is decreased, and lifetime of the inverter is extended.

“Cree is extremely pleased that Sanix has chosen to specify our C2M, 1200-V SiC MOSFET technology in its new 9.9 kW solar inverters. Cree SiC power devices can provide significant advantages with regard to PV inverter efficiency, reliability, and cost, and will provide Sanix with a critical competitive advantage as they continue to expand their share of the Japanese solar market,” said Cengiz Balkas, general manager and vice president, Cree Power and RF.

Demonstrated to achieve up to three times the power density of typical silicon technology, Cree’s C2M family of SiC MOSFETs are available in 1200 and 1700 V, ranging from 1 to 25 mΩ. C2M MOSFETs have been designed into a range of industrial power applications since their March 2013 market introduction and continue to experience increasing demand. Cree is currently delivering production volumes of SiC MOSFETs to Sanix and other PV inverter manufacturers, as well as to makers of industrial power supplies, auxiliary power converters, battery chargers, and motor drives.

For more information about Cree’s C2M SiC MOSFETs, please visit www.cree.com/Power/Landing-pages/MOSFET-products. To request C2M SiC MOSFET models, please visit www.cree.com/Power/Tools-and-Support/MOSFET-model-request2. For additional information about Cree power products, please download the Cree Power Product Selector Guide at www.cree.com/~/media/Files/Cree/Power/Sales%20Sheets/Power_Product_Selector_Guide.pdf.

For information about Cree’s many distribution partners, please visit www.cree.com/power or contact Cree Power using the online form available at www.cree.com/Contact/Forms/Power-contact-form.

About Cree

Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs and LED lighting solutions.

Cree's product families include power MOSFETs, power diodes, and power modules. Additionally, Cree offers LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.

For additional product and company information, please refer to www.cree.com.