Cu-on-Si process to speed portable RF electronics development

Cu-on-Si process to speed portable RF electronics development

ON Semiconductor (Phoenix, AZ) recently announced a new integrated passive device (IPD) process technology, an enhancement to the company’s existing HighQ copper (Cu)-on-silicon (Si) IPD technology, which promises to enable fast development of cost-effective RF front-end products. Dubbed IPD2, the new 8-in.-wafer process features a second 5-µm copper layer that increases inductor performance, allows greater flexibility, and supports the design of highly precise, cost-effective IPDs for RF system-in-package applications in portable electronics equipment.

Typical IPD2-based designs will include baluns, low-pass and bandpass filters, and diplexers used in the latest portable and wireless applications. This process will be supported with a comprehensive set of design tools and technical assistance, plus prototyping capabilities. For more information, visit http://www.onsemi.com.

Christina Nickolas