Dev boards target RF MOSFET gate drivers

The DVRFD630 and DVRFD631 RF MOSFET gate driver development boards demonstrate the performance of the IXRFD630 and IXRFD631 RF MOSFET gate drivers and provide a building block for high-speed power circuit development. The IXRFD630 gate driver can source and sink 30 A peak, with voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. It comes in a 0.614 x 0.650-in. SMT package.

The IXRFD631 driver is an improved version of the D630 with the addition of a Kelvin ground connection and additional bypass caps on the substrate. Two configurations are available for either board — one for a DE150- or DE275-size MOSFET and one for a larger footprint DE375- or DE475-size device. The board kits are $99 each.