Development boards with 200-V eGaN FETs enable high efficiency to 30 MHz

The EPC9052 , EPC9053 , and EPC9054 development boards enable power systems designers to evaluate the high efficiency achieved with 200 V gallium nitride (GaN) transistors. These development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is used. Examples include, but are not limited to, push-pull converters, current-mode class-D amplifiers, common source bi-directional switch, generic high voltage narrow pulse width applications such as LiDAR, and push-pull converters operating up to 30 MHz.

The development board amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator. All three boards have common preference specifications. The operating load conditions, including configuration, determine the optimal design load voltage and resistance.