By Gina Roos, editor-in-chief
ON Semiconductor has launched two new silicon-carbide (SiC) MOSFET devices , the industrial-grade NTHL080N120SC1 and the AEC-Q101 automotive-grade NVHL080N120SC1. These devices can be used in applications such as automotive DC/DC and on-board chargers for electric vehicles as well as solar and uninterruptible and server power supplies.
The 1,200-V, 80-mΩ SiC MOSFETs offer high power density with highly efficient operation that can reduce operating costs and overall system size due to smaller footprints. This also translates into less thermal management requirements, which further reduces the bill of materials costs, size, and weight, said ON Semi.
Key features:
- Low leakage current
- A fast intrinsic diode with low reverse-recovery charge, which gives steep power-loss reduction and supports higher frequency operation and greater power density
- Low Eon and Eoff/fast turn ON and OFF combined with low forward voltage to reduce total power losses and cooling requirements
- Low capacitance supports the ability to switch at very high frequencies, which reduces EMI issues.
- Higher-surge, avalanche capability
In addition, the devices feature a patented termination structure that delivers higher reliability and ruggedness, said the company. They also offer a maximum operating temperature of 175°C.
ON Semiconductor’s SiC devices and solutions will be on display at APEC.
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