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GaN Systems demos high-current GaN power transistor

The 650-V, 150-A GaN power transistor boasts 100× lower switching losses than comparable IGBTs

By Gina Roos, editor-in-chief

GaN Systems will demonstrate its 650-V, 150-A GaN power transistor at PCIM Europe, claiming the industry’s highest-current 650-V GaN power transistor. The GS-065-150  device delivers 100 times lower switching losses than comparable IGBTs, claiming a 99% reduction in switching losses. The company will also showcase a variety of products from customers and partners at the show.

Other products on display include the GS-065 low-current (3.5-A to 11-A) transistor line  with EZDrive circuit compatibility. The combination of a smaller design with the EZDrive circuit eliminates the need for a discrete driver, which reduces the bill of materials cost and improves performance, said GaN Systems.

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The company also plans to show several reference tools  including a high-efficiency evaluation board for the new 50-W wireless power amplifier , targeting wireless power transfer and charging applications; 1.5-kW and 3-kW bridgeless totem pole PFC reference designs using the 650-V power transistors, and high-performance insulated metal substrate (IMS) half-bridge thermal mounting solutions with three power level configurations up to 1.5 kW, 3 kW, and 6 kW.

Visitors can watch customer demonstrations that range from AC/DC and DC/DC power supplies, energy storage systems, and laptop AC chargers to high-power wireless charging systems for drones, robots, scooters, and 5G applications. The latest innovations in the automotive space include an EV on-board charger, traction inverter, and a 480-W, four-channel LiDAR laser driver. Visit GaN Systems at Booth 9-507.

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