By Gina Roos, editor-in-chief
Infineon Technologies AG has expanded its CoolSiC Schottky 1,200-V G5 diode portfolio with the release of a TO247-2 package, which can replace silicon diodes for higher efficiency in automotive, solar energy, and industrial applications. The expanded 8.7-mm creepage and clearance distances offer extra safety in high-pollution environments.
Thanks to its higher efficiency, the CoolSiC Schottky 1,200-V G5 diode with a 10-A rating, as an example, can serve as a drop-in replacement for a 30-A silicon diode. The CoolSiC Schottky diodes in a TO247-2 pin package can be ordered now in five current classes: 10 A, 15 A, 20 A, 30 A, and 40 A.
Available in forward currents up to 40 A, Infineon’s 1,200-V Schottky diodes can be used in electric vehicle (EV) DC charging, solar energy systems, uninterruptible power supplies (UPS), and other industrial applications.
When used in combination with a silicon IGBT or super-junction MOSFET, the CoolSiC Schottky 1,200-V G5 diode raises efficiency up to 1% compared to using silicon diodes. Infineon cites a Vienna rectifier stage or PFC boost stage used in three-phase conversion systems as an example, wherein the output power of the PFC and DC/DC stages can thus be increased by 40% or more.
Infineon also announced volume production for its line of 1,200-V CoolSiC MOSFET devices. They are rated from 30 mΩ to 350 mΩ and are available in TO247-3 and TO247-4 packages.
The company also plans to release a portfolio of CoolSiC MOSFETs in discrete packages. These include a surface-mount device (SMD) portfolio and a 650-V CoolSiC MOSFET product family. Both are expected to be launched soon. Target applications include battery charging infrastructure, energy storage solutions, photovoltaic inverters , uninterruptable power supplies , motor drives , and server and telecom switched-mode-power supplies (SMPS).
CoolSiC trench technology features an exclusively high threshold voltage rating (Vth ) larger than 4 V combined with a low Miller capacitance, said Infineon, which provides best-in-class immunity against unwanted parasitic turn-on effects compared to other SiC MOSFETs in the market. Other key specs include a turn-on gate-source voltage of 18 V with 5-V margin and a maximum rated voltage of 23 V.
The new 1,200-V CoolSiC MOSFETs in the TO247 package can be ordered now with a standard delivery lead time. Corresponding on-resistance ratings in the SMD portfolio in a D2 PAK-7 housing will be available as engineering samples in Q4 2019. The 650-V CoolSiC MOSFET engineering samples in TO247-3 and TO247-4 packages rated at 26 mΩ to 107 mΩ will also be available in Q4 2019.
Infineon is exhibiting at PCIM Europe in Booth #313 in Hall 9. Visit www.infineon.com/pcim for show highlights.
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