Dual MOSFET arrays feature 0 threshold V

The ALD212900A/ALD212900 family of dual monolithic, n-channel MOSFET arrays are available in an eight-pin SOI package and feature zero-threshold voltage. The devices establish new industry benchmarks for forward transconductance, output conductance and drive. The dynamic range offered by these devices range from a few nanoamps to tens of milliamps. The device features >100,000,000:1 operating current ranges, a dc-current gain at a drain output current of 30 mA and input current of 300 pA. It also offers an input impedance of 2.5 x 10¹⁰ Ω and a dc current gain >10⁸ .

The MOSFETs are suited for low-voltage and small signal applications and can work in sub-threshold regions with 50 mA). The devices device electrical characteristics matching with the gate threshold voltage VGS(th) set precisely at +0.00 V +0.01 V, featuring a typical offset voltage of 0.001 V. The devices are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. When the gate voltage of the MOSFET is set at 0.00 V, the drain current is +20 µA at VDS = 0.1 V, which allows a class of circuit designs with output voltage level biased at or near input voltage level without voltage level shift. They can be used for switching and amplifying applications in +0.1 V to +10 V powered systems where low input bias current, low input capacitance, and fast switching speed are desired.