Dual-MOSFET combo saves space

A complementary pair of 100-V enhancement-mode MOSFETs in an SO8 package, the ZXMC10A816 is aimed at H-bridge circuits in dc fan and inverter circuits, Class D amplifier output stages and other 48-V applications. It helps replace equivalent devices in SOT223 and DPak (TO252) packages.

The n- and p-channel MOSFET combination of the device reduces board space and component count and simplifies gate drive circuit layouts. The SO8 package’s footprint is 31 mm2 , which is 30% smaller than an SOT223 MOSFET. The gate charge and typical RDS(on) of the n-channel is 230 mΩ with 2.4-W power dissipation, and 235 mΩ at 2.6-W power dissipation for the p-channel. ($0.28 ea/10,000 — available now.)

Diodes , Dallas , TX
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http://www.diodes.com