Dual MOSFETs achieve 98% efficiency

Vishay Intertechnology, Inc. has launched two new 30-V symmetric dual n-channel power MOSFETs that combine high- and low-side TrenchFET Gen V MOSFETs in a 3.3 × 3.3 mm PowerPAIR 3x3FS package. The Vishay Siliconix SiZF5300DT and SiZF5302DT achieve 98% efficiency, while reducing component count and simplifying power conversion designs in computing and telecom applications.

(Source: Vishay Intertechnology)

Leveraging Vishay’s 30-V Gen V technology, the SiZF5300DT provides a typical on-resistance of 2.02 mΩ at 10 V and 2.93 mΩ at 4.5 V, while the SiZF5302DT offers an on-resistance of 2.7 mΩ at 10 V and 4.4 mΩ at 4.5 V. The typical gate charge for the MOSFETs at 4.5 V is 9.5 nC and 6.7 nC, respectively.

The resulting ultra-low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — is 35% lower than previous-generation solutions with similar on-resistance, said Vishay. For high frequency switching applications, this translates into a 2% increase in efficiency, allowing for efficiency of 98% at 100 W.

In terms of space savings, the dual MOSFETs can be used in place of two discrete devices in the PowerPAK 1212 package, saving 5 % board space, and offering a 63% smaller footprint than dual MOSFETs in the PowerPAIR 6x5F.

These devices can be used for synchronous buck converters, point of load (POL) conversion, and DC/DC modules in laptops with USB-C power delivery, servers, DC cooling fans, and telecom equipment. In these applications, the high- and low-side MOSFETs of the SiZF5302DT deliver 50% duty cycles and best-in-class efficiency, in particular from 1 A to 4 A, said Vishay, while the SiZF5300DT targets heavy loads in the 12-A to 15-A range.

Key device specifications

(Source: Vishay Intertechnology)

The SiZF5300DT and SiZF5302DT dual MOSFETs are available for samples and production quantities. Please request lead time information by email to pmostechsupport@vishay.com.