Dual MOSFETs aid high power density

The FDMS3602S and FDMS3604AS power-stage dual asymmetric MOSFET modules incorporate a control and synchronous MOSFET, as well as a monolithic Schottky body diode in a PQFN package, aiding high-power-density design. By integrating these devices into one module, the modules reduce board space by replacing two or more 5 x 6-mm PQFN, S08 and DPAK packages.

The family of products achieve sub 2-mΩ low-side RDS(on). The MOSFETs minimize the combination of conduction and switching losses from 300 to 600 kHz for PoL and multiphase synchronous buck dc/dc applications. (Ea/1,000: FDMS3602S, $1.86; FDMS3604AS, $1.62 — available now.)

By Paul O’Shea

Fairchild Semiconductor , South Portland , ME
Sales 207-775-8100
www.fairchildsemi.com