Dual-power MOSFETs suit space apps

The IRHLUC770Z4, IRHLUC7970Z4, and IRHLUC7670Z4 are the first members of the radiation-hardened (RAD-Hard) dual-power MOSFET family. The devices feature a compact hermetic LCC-6 surface-mount package for low-power lightweight space applications.

The radiation-hardened MOSFETs are available in dimensions from 0.245 x 0.17-in. with a 0.08-in. profile. The 60-V logic-level devices are available in two n-channel, two p-channel or one n- and one p-channel configuration co-packaged in a six-pad LCC-6 surface-mount package. The MOSFETs are rated at 100 krad or 300 krad total ionizing dose. Devices are single-event effect rated at 85 MeV/(mg/cm2) LET mass-stopping power. (IRHLUC770Z4, $624 ea/10 available now.)

By Paul O’Shea

International Rectifier , El Segundo , CA
Sales 310-252-7105
http://www.irf.com