eGaN FET offers 100 V, 6 A with 30 mΩ max

eGaN FET offers 100 V, 6 A with 30 mΩ max

The EPC2007 FET is a 1.87-mm2 , 100-VDS, 6-A device with a maximum RDS(on) of 30 mΩ. It features 2.1 nC Qg figure of merit, which is 22% less than the first-generation device.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is smaller and has superior switching performance. Applications that benefit from eGaN FET performance include hard-switched and high frequency circuits such as isolated dc/dc power supplies, point-of-load converters, and Class D audio amplifiers. ($1.31 ea/1,000 — available now.)

By Paul O’Shea

Efficient Power Conversion , El Segundo , CA
information 310-615-0279

www.epc-co.com