Enhancement-mode GaN power transistor points to the look of the future
Efficient Power Conversion (EPC) is the first company to introduce enhancement-mode gallium-nitride-on-silicon transistors (eGaN) for applications in servers, netbooks, notebooks, cell phones, base stations, flat-panel displays, and Class D audio amplifiers. It offers device performance many times greater than the best silicon power MOSFETs.
The EPC1001 eGaN Power FET features 100-V drain-to-source, 25 A continuous, 100-A pulsed, 6-V gate-to-source and 5.6 mΩ typ RDS(on) . The power transistor demonstrates significant performance advantages over state-of-the-art silicon-based power MOSFETs. This technology produces devices that are smaller than similar resistance silicon devices and has superior switching performance. Other applications that benefit from this newly available performance are dc/dc power conversion, PoL converters, and LED drive circuits.
The enhancement mode (normally OFF) GaN technology was explicitly developed to replace power MOSFETs. The products are produced in a standard silicon CMOS foundry on 150-mm silicon wafers. The use of this low-cost infrastructure has allowed EPC to price the initial product offerings aggressively in order to accelerate the conversion from silicon power MOSFETs.
Results from reliability testing on the eGaN power devices, as well as application notes, Spice models, demo boards, and development kits, can be found at www.epc-co.com.
Efficient Power Conversion
El Segundo , CA
information 310-615-0279
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