Fairchild Semiconductor’s High Power Bipolar Junction Transistors Deliver High Efficiency for Electronic Ballast, Power Supply and Industrial Designs

Fairchild Semiconductor's High Power Bipolar Junction Transistors Deliver High Efficiency for Electronic Ballast, Power Supply and Industrial Designs

Fairchild Semiconductor’s 3A and 5A bipolar junction transistors (BJT) contribute to energy-savings in electronic ballast, power supply and industrial designs due to their ultra-fast switching speeds and low saturation voltage. The FJD5555’s saturation voltage is as low as 0.5V and the FJD5553 is as low as 0.23V which is 50 percent lower than industry alternatives.

The FJD5555 and FJD5553’s Saturation Voltage is the Lowest in the Industry

The combination of low saturation voltage and high switching speed positively contributes to overall efficiency. Both the FDJ5555 and the FDJ5553 feature a high breakdown voltage (1050V), which is particularly important for lighting applications that need a wide safe operating area. These transistors are packaged in ultra-compact DPAK packaging (64mm2) to conserve space in electronic ballast and power supply designs.

This series of bipolar transistors are part of a comprehensive portfolio of transistors including BJTs, IGBTs, JFETs, load switches, MOSFETs, MOSFET/Schottky diodes and small signal transistors.

The FJD5555 and FJD5553 utilize lead-free (Pb-free) terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).