First 80-V half-bridge GaN FET module introduced

The industry’s first 80-V, 10-A integrated gallium nitride (GaN) FET power-stage prototype, consists of a high-frequency driver and two GaN FETs in a half-bridge configuration. The power stage will help accelerate market adoption of next-generation GaN power-conversion solutions that provide increased power density and efficiency for space-constrained, high-frequency industrial and telecom applications.

The integrated half-bridge GaN power stage delivers 25% lower power losses compared to silicon-based designs, enabling single-stage conversion. It features advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz. Prototype samples of the GaN power stage are available to purchase at $50 each with a maximum purchase of 10 units. The LMG5200 EVM is available for $299.