First available GaN power transistor offers 90% efficiency

The EPC2100 is the first commercially available enhancement-mode monolithic GaN transistor half bridge. It integrates two eGaN power FETs into a single device so the interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

Each device within the half-bridge component has a voltage rating of 30 V.  The upper FET has a typical R_DS(on) of 6 mΩ, and the lower FET has a typical R_DS(on) of 1.5 mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient dc/dc conversion in buck converters with a high V_IN /V_OUT ratio. It’s available in a chip-scale package and measures 6 x 2.3-mm. The EPC9036 development board that contains one EPC2100 is also available.