First GaN half-bridge transistor integrates two GaN FETs

Today, the most common building block used in power conversion is the half bridge. It is the starting point for the journey towards a power system-on-a-chip. The EPC2100 is the first commercially available enhancement-mode monolithic half bridge GaN transistor. It integrates two eGaN power FETs into a single device so the interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. 

Beyond just performance and cost improvement, the greatest opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. In the future, GaN technology, as opposed to common silicon IC technology, will allow designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way. Get more information at www.epc-co.com