The LMG3410 70-mΩ, 600-V GaN FET power stage is the first high-voltage driver-integrated GaN solution. The power stage delivers 50% lower power losses in a totem-pole PFC compared with state-of-the-art silicon, FET-based boost power-factor converters. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing, and renewable energy applications.
With its integrated driver and features such as zero reverse-recovery current, the GaN FET provides reliable performance, especially in hard-switching applications in which it can reduce switching losses by as much as 80%. Unlike standalone GaN FETs, the LMG3410 integrates built-in intelligence for temperature, current, and undervoltage lockout (UVLO) fault protection. The 8 x 8-mm quad flat no-lead (QFN) package decreases power loss, component voltage stress, and electromagnetic interference (EMI) compared to discrete GaN solutions.
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