GaN FETs tout lowest on-resistance

Efficient Power Conversion (EPC) has announced the 150-V, 3-mΩ EPC2305 and 200-V, 5-mΩ EPC2304 GaN FETs, claiming the lowest on-resistance (R_DS(on)) in a 15× smaller size compared to alternative silicon MOSFETs. In addition, the Q_G, Q_GD, and Q_OSS are more than three times smaller than silicon MOSFETs and the reverse recovery charge (Q_RR) is zero.

Together, these improvements result in switching losses that are six times smaller in hard switching and soft switching applications and the driver losses are three times less than silicon solutions, while significantly reducing ringing and overshoot, said EPC.

(Source: EPC)

The GaN FETs are housed in a 3 × 5-mm thermally enhanced QFN “Thermal-Max” package with an exposed top for thermal management. Side-wettable flanks guarantee that the complete side-pad surface is wetted with solder during the reflow soldering process, protecting the copper and allowing soldering on the external flank area for easy optical inspection.

The EPC2305 150-V, 329-A enhancement mode GaN power transistor enables designers to improve efficiency, save space, and take advantage of lower cost cooling. Ultra-low capacitance and zero reverse recovery of the FET provides efficient operation. Key benefits include ultra-high efficiency, no reverse recovery Q_RR, ultra-low Q_{G, a} small footprint, and excellent thermal performance. Target applications include AC/DC chargers and adaptors; fast chargers for phone, notebook, and gaming PCs; DC/DC and chargers for eMobility, power tools, home robotics; high frequency DC/DC, BLDC motor drives, eMobility motor drives, solar optimizer & MPPT, and Class-D audio,

In comparison, the EPC2304 200-V, 260-A enhancement mode GaN power transistor targets tasks where very high switching frequency and low on-time are beneficial and applications where on-state losses dominate. Applications include synchronous rectification, AC/DC chargers, SMPS, adaptors, high-frequency DC-DC conversion, Class D audio, wireless power, and high-power LiDAR and dToF. Key benefits include lower conduction and switching losses, zero reverse recovery (Q_RR) losses, ultra-small footprint, and higher power density.  The devices also provide higher efficiency, reduced size and weight, and robust reliability required for solar optimizers and microinverters, said EPC.

Two development boards are available. The half-bridge development boards include the EPC90140,  featuring the EPC2304 GaN FET,  and the EPC90143 for the EPC2305 GaN FET. All critical components are included.

The EPC2304 and EPC2305 are priced at $5.25 and $4.95 each, respectively, both in quantities of 1,000 units. The EPC90140 and EPC90143 development boards are priced at $200 each. All devices and boards are available for immediate delivery from Digi-Key.