GaN half-bridge IC integrates everything for 2 MHz switching

The NV6250 is the industry’s first integrated half-bridge GaN power IC that features half-bridge circuits that are essential building blocks in the power electronics industry. The devices are used in everything from smartphone chargers and laptop adapters, to TVs, solar panels, data centers and electric vehicles. The company’s proprietary AllGaN half-bridge GaN Power IC with iDrive, monolithically integrates all the functions required to deliver switching speeds of up to 2 MHz and enable a dramatic reduction in size, cost and weight while delivering faster charging. The GaN-based power IC has switching speeds that are 30x faster than silicon-based half-bridge components.

The first half-bridge GaN Power IC is the 650 V-rated NV6250, in a 6 x 8mm QFN complete with dual drivers, level shifter, dual 560 mΩ power FETs, bootstrap circuit and extensive protection features. Simple, low-power digital PWM inputs switch the half-bridge at all frequencies, with significant ease-of-use and layout flexibility for the power system designer. The NV6250 is compatible with a wide range of analog and digital controllers from multiple IC partners.

Samples and demonstration boards for the NV6250 are available immediately to qualified customers, with production planned for Q2, 2017. Navitas will demonstrate the NV6250 and other AllGaN GaN Power ICs in a private suite at the Applied Power Electronics Conference (APEC) March 26^th – 30^th , 2017 in Tampa, Florida. Please contact Navitas (+1 ThinkGaNIC (+1-844-654-2642)) to book a review.