GaN HEMTs boost WiMAX power 50%

Targeting WiMAX and broadband wireless access applications operating between 2.3 and 3.9 GHz, a series of GaN HEMTs enables an improvement of up to a 40% in device efficiency when compared with silicon LDMOS or GaAs under 802.16-2004. Producing 2.5 W with a 28% drain efficiency, the 2.3 to 2.9-GHz CGH27015S provides 15 dB of small-signal gain and 2.0% EVM under OFDM modulation at 28 V and the 3.3 to 3.9-GHz CGH35015S a gain of 13 dB.

The 4-W CGH35030F has a 23% drain efficiency from 3.3 to 3.9 GHz with over 11 dB gain and 2% EVM under OFDM modulation. When employed in an efficiency-enhancement circuit, a pair of these transistors produced more than 10 W of average power with over 42% efficiency in the 3.5-GHz WiMAX band. (contact company for pricing and availability.)

Cree , Durham , NC
Deb Lovig 919-287-7505

http://www.cree.com